Development of world’s first vertical Ga2O3 transistor through ion implantation doping

Researchers at the National Institute of Information and Communications Technology (NICT) and Tokyo University of Agriculture and Technology (TUAT) demonstrate a vertical Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET) that adopts an all-ion-implanted process for both n-type and p-type doping, paving the way for new generations of low-cost and highly-manufacturable Ga2O3 power electronic devices.

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